JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
2SD1119 TRANSISTOR (NPN)
FEATURES
z z
SOT-89-3L Plastic-Encapsulate Transistors SOT-89 -3L
1. BASE
2. COLLECTOR 1 2 3. EMITTER 3
Low collector-emitter saturation voltage VCE(sat)
Satisfactory operation performances at high efficiency with the low voltage power supply.
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol Parameter Value Unit VCBO VCEO VEBO IC PC TJ Tstg Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction Temperature Storage Temperature 40 25 7 3 500 150 -55~150 V V V A mW ℃
℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current
SymbolV(BR)CBOV(BR)CEOV(BR)EBOICBO IEBO hFE(1)
DC current gain
hFE(2)
Collector-emitter saturation voltage Transition frequency Collector output capacitance
VCE(sat) fT Cob
VCE=2V, IC=2A
150 Test conditions
IC =100μA, IE=0 IC =1mA, IB=0 IE=10μA, IC=0
Min
Typ Max Unit40 V 25
V
7 V VCB=10V, IE=0 0.1 μA
VEB=6V, IC=0 0.1 μA VCE=2V, IC=500mA
230 600 IC=3A, IB=0.1A 1 V VCE=6V, IC=50mA, f=200MHz VCB=20V, f=1MHz
150
50
MHzpF
CLASSIFICATION OF hFE(1)
Rank Q Range Marking
R 230-380 340-600 TQ TR A,Jun,2011
【南京南山半导体有限公司 — 长电三极管选型资料】www.nscn.com.cnSymbolAbb1cDD1EE1ee1LDimensions In MillimetersMin.Max.1.4001.6000.3200.5200.4000.5800.3500.4404.4004.6001.550 REF.2.3002.6003.9404.2501.500 TYP.3.000 TYP.0.9001.200Dimensions In InchesMin.Max.0.0550.0630.0130.0200.0160.0230.0140.0170.1730.1810.061 REF.0.0910.1020.1550.1670.060 TYP.0.118 TYP.0.0350.047
The bottom gasket
The file folder
Label on the Reel
Plastic bag
1000×1 PCS
The top gasket
Seal the box with the tape Stamp “EMPTY” on the empty box Seal the box with the tape QA Label
Label on the Inner Box
Inner Box: 210 mm× 208 mm×２０３ mm
Label on the Outer Box Outer Box: 440 mm× 440 mm× 230 mm
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