专利名称：EUV LIGHT SOURCE发明人：Michael Patra申请号：US14568519申请日：20141212
公开号：US20150137012A1公开日：20150521
专利附图：
摘要：An EUV light source for a projection exposure apparatus for EUV projectionlithography includes a first electron beam device in the form of an electron beam supplydevice. The light source furthermore includes an EUV generation device supplied with anelectron beam by the electron beam supply device. The light source furthermore
includes a second electron beam device in the form of an electron beam disposal devicewhich disposes of an electron beam in the beam path downstream of the EUV generationdevice. At least one of the electron beam devices on the one hand and the EUV
generation device on the other hand are arranged in rooms which are situated one abovethe other and separated by a building ceiling. At least one electron beam passage isarranged in the building ceiling. This results in an electron beam-based EUV radiationsource with the possibility of a manageable operational outlay.
申请人：Carl Zeiss SMT GmbH
地址：Oberkochen DE
国籍：DE
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