Method of reducing critical dimension bias of dens

专利名称：Method of reducing critical dimension bias

of dense pattern and isolation pattern

发明人：Ching-Yu Chang,Hsin-huei Chen,Meng-Wei

Chen

申请号：US10249559申请日：20030418公开号：US07097945B2公开日：20060829

专利附图：

摘要：A method of reducing a critical dimension (“CD”) bias between a densepattern and an isolation pattern is disclosed. The method includes a first step of

providing a mask having a dense pattern, an isolation pattern and the other area of themask is transparent, in which mask the dense pattern has a first opaque pattern and theisolation pattern has a second opaque pattern. The second step of the method is forminga virtual pattern around the isolation pattern, in which a distance between the virtualpattern and the isolation pattern is y, and the virtual pattern has a pattern line width x. Byforming the virtual pattern around the isolation pattern, the flare effect of the isolationpattern is close to that of the dense pattern, thus the CD bias between a dense pattern,and an isolation pattern is reduced, and the process window does not shrink.

申请人：Ching-Yu Chang,Hsin-huei Chen,Meng-Wei Chen

地址：Yilan Hsien TW,Miaoli TW,Changhua TW

国籍：TW,TW,TW

代理机构：Jianq Chyun IP Office

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