2N2369

HIGH-FREQUENCYSATURATEDSWITCH

DESCRIPTION

The2N2369isasiliconplanarepitaxialNPNtran-sistorinJedecTO-18metalcase.Itisdesignedspe-cificallyforhigh-speedsaturatedswitchingapplica-tionsatcurrentlevelsfrom100µAto100mA.

TO-18

INTERNALSCHEMATICDIAGRAM

ABSOLUTEMAXIMUMRATINGS

SymbolVCBOVCESVCEOVEBOICMPtot

Parameter

Collector-baseVoltage(IE=0)Collector-emitterVoltage(VBE=0)Collector-emitterVoltage(IB=0)Emitter-baseVoltage(IC=0)CollectorPeakCurrent(t=10µs)TotalPowerDissipationatTamb≤25°C

atTcase≤25°CatTcase≤100°CStorageandJunctionTemperature

Value4040154.50.50.361.20.68–65to200

UnitVVVVAWWW°C

Tstg,Tj

ProductsapprovedtoCECC50004-022/023availableonrequest.

January19891/4

2N2369

THERMALDATA

Rthj-caseRthj-amb

ThermalResistanceJunction-caseThermalResistanceJunction-ambient

MaxMax

146486

°C/W°C/W

ELECTRICALCHARACTERISTICS(Tamb=25°Cunlessotherwisespecified)

SymbolICBOV(BR)V(BR)V(BR)V(BR)VCEVBE

CBO

Parameter

CollectorCutoffCurrent(IE=0)

Collector-baseBreakdownVoltage(IE=0)

Collector-emitterBreakdownVoltage(VBE=0)

Collector-emitterBreakdownVoltage(IB=0)Emitter-baseBreakdownVoltage(IC=0)

Collector-emitterSaturationVoltage

Base-emitterSaturationVoltage

DCCurrentGain

TestConditionsVCB=20VVCB=20VIC=10µAIC=10µAIC=10mAIE=10µAIC=10mAIC=10mA

IB=1mAIB=1mATamb=150°C

Min.Typ.Max.0.430

UnitµAµAVVVV

4040154.5

0.2

0.7402020500

6502.56913

4131218

0.75

0.250.85120

CESCEO*

EBO

(sat)*

VV

(sat)

*

hFE*

VCE=1VIC=10mA

IC=100mAVCE=2VIC=10mAVCE=1VTamb=–55°CIC=10mAf=100MHzIE=0f=1MHz

VCE=10VVCB=5V

fTCCBOtstontoff

TransitionFrequencyCollector-baseCapacitanceStorageTimeTurn-onTimeTurn-offTime

MHzpFnsnsns

IC=10mAVCC=10VIB1=–IB2=10mAIC=10mAIB1=3mAIC=10mAIB1=3mA

VCC=3VVCC=3V

IB2=–1.5mA

*Pulsed:pulseduration=300µs,dutycycle=1%.

2/4

2N2369

TO-18MECHANICALDATA

mm

MIN.

ABDEFGHIL

45o2.54

1.21.16

45o

TYP.12.7

0.495.34.95.8

0.100

0.0470.045

MAX.

MIN.

inchTYP.0.500

0.0190.2080.1930.228MAX.

DIM.

D

G

IH

EFA

L

C

B0016043

3/4

2N2369

Informationfurnishedisbelievedtobeaccurateandreliable.However,SGS-THOMSONMicroelectronicsassumesnoresponsabilityfortheconsequencesofuseofsuchinformationnorforanyinfringementofpatentsorotherrightsofthirdpartieswhichmayresultsfromitsuse.NolicenseisgrantedbyimplicationorotherwiseunderanypatentorpatentrightsofSGS-THOMSONMicroelectronics.Specificationsmentionedinthispublicationaresubjecttochangewithoutnotice.Thispublicationsupersedesandreplacesallinformationpreviouslysupplied.

SGS-THOMSONMicroelectronicsproductsarenotauthorizedforuseascriticalcomponentsinlifesupportdevicesorsystemswithoutexpresswrittenapprovalofSGS-THOMSONMicroelectonics.

©1994SGS-THOMSONMicroelectronics-AllRightsReserved

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4/4

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