TOSHIBA InGaAℓP LED
TL(RE,OE,YE,GE)60T(F) TLRE60T(F),TLOE60T(F),TLYE60T(F),TLGE60T(F)
Panel Circuit Indicators
• 3-mm package • InGaAℓP • Plastic-molded • Transparent lens
• Available in 4 colors: red, orange, yellow and green • luminous intensity
• Excellent low-current light output • Wide radiation pattern • Application: backlighting
Unit: mm Product List
Part Number
Color
Material
TLRE60T(F) Red
TLOE60T(F) Orange TLYE60T(F) Yellow TLGE60T(F) Green InGaAlP
JEDEC JEITA ― ―
TOSHIBA 4-3L1 Weight: 0.12 g (typ.)
Power Dissipation
PD (mW)
Operating Temperature Topr (°C)
Storage Temperature Tstg (°C)
Absolute Maximum Ratings (Ta = 25°C)
Part Number TLRE60T(F) TLOE60T(F) TLYE60T(F) TLGE60T(F)
Forward Current
IF (mA)
Reverse Voltage
VR (V)
50 4 120 −40 to 100 −40 to 120
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Allowable forward current IF (mA) Note 1: Forward current derating
IF – Ta
80
60
40
20
00
20406080100120
Ambient temperature Ta (°C)
12008-09-18
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www.smdled.comElectrical and Optical Characteristics (Ta = 25°C)
Part Number
Typ. Emission Wavelength λd
TLRE60T(F) 630 TLOE60T(F) λP
Δλ
Luminous Intensity
IV
TL(RE,OE,YE,GE)60T(F) Forward Voltage
VF Reverse Current
IR
VR
IF Min Typ.IF Min Typ. IF Max644 20 20 15.345 20 1.9 2.4 20 50 4 100 20 2.0 2.4 20 50 4 85 20 2.0 2.4 20 50 4 50 20 2.0 2.4 20 50 4 605 612 20 20 27.2
TLYE60T(F) 587 590 17 20 27.2TLGE60T(F) 571 574 17 20 15.3
Unit nm mA mcd mA V mA μA V
Precautions
Please be careful of the following:
• Soldering temperature: 260°C max, soldering time: 3 s max
(soldering portion of lead: up to 1.6 mm from the body of the device)
• If the lead is formed, the lead should be formed up to 1.6 mm from the body of the device without forming stress
to the resin. Soldering should be performed after lead forming. • This visible LED lamp also emits some IR light.
If a photodetector is located near the LED lamp, please ensure that it will not be affected by this IR light.
22008-09-18
www.smdled.comTLRE60T(F)
IF – VF
100 50 30 1000TL(RE,OE,YE,GE)60T(F)
IV – IF
Luminous intensity IV (mcd) 500300Ta = 25°C Ta = 25°C Forward current IF (mA) 100503010 5 3 10531 1.6 1.7 2.1 1.8 1.9 2.0 2.2 2.311351030 50 100Forward voltage VF (V) Forward current IF (mA)
IV – Tc
3 1.0
Relative luminous intensity – Wavelength
IF = 20 mA Ta = 25°C Relative luminous intensity IV Relative luminous intensity −20
0 40 20 60 80
0.81 0.60.5 0.3 0.40.20.1 0580
600620640 660 680 700
Case temperature Tc (°C) Wavelength λ (nm)
Radiation pattern
Ta = 25°C
20° 30° 40° 50° 60° 70° 80° 90° 10°
0°
10°
20°
30°
40°
50° 60° 70° 80° 90° 1.0
0 0.2 0.4 0.6 0.8
32008-09-18
www.smdled.comTLOE60T(F)
IF – VF
100 50 30 1000TL(RE,OE,YE,GE)60T(F)
IV – IF
Luminous intensity IV (mcd) 500300Ta = 25°C Ta = 25°C Forward current IF (mA) 100503010 5 3 10531 1.6 1.7 2.1 1.8 1.9 2.0 2.2 2.3113510 30 50 100
Forward voltage VF (V) Forward current IF (mA)
IV – Tc
3 1.0
Relative luminous intensity – Wavelength
IF = 20 mA Ta = 25°C Relative luminous intensity IV Relative luminous intensity −20
0 40 20 60 80
0.81 0.60.5 0.3 0.40.20.1 0540
560580600 620 640 660
Case temperature Tc (°C) Wavelength λ (nm)
Radiation pattern
Ta = 25°C
20° 30° 40° 50° 60° 70° 80° 90° 10°
0°
10°
20°
30°
40°
50° 60° 70° 80° 90° 1.0
0 0.2 0.4 0.6 0.8
42008-09-18
www.smdled.comTLYE60T(F)
IF – VF
100 50 30 1000TL(RE,OE,YE,GE)60T(F)
IV – IF
Luminous intensity IV (mcd) 500300Ta = 25°C Ta = 25°C Forward current IF (mA) 100503010 5 3 10531 1.6 1.7 2.1 1.8 1.9 2.0 2.2 2.311351030 50 100Forward voltage VF (V) Forward current IF (mA)
IV – Tc
3 1.0
Relative luminous intensity – Wavelength
IF = 20 mA Ta = 25°C Relative luminous intensity IV Relative luminous intensity −20
0 40 20 60 80
0.81 0.60.5 0.3 0.40.20.1 0540560580600 620 640 660Case temperature Tc (°C) Wavelength λ (nm)
Radiation pattern
Ta = 25°C
20° 30° 40° 50° 60° 70° 80° 90° 10°
0°
10°
20°
30°
40°
50° 60° 70° 80° 90° 1.0
0 0.2 0.4 0.6 0.8
52008-09-18
www.smdled.comTLGE60T(F)
IF – VF
100 50 30 1000TL(RE,OE,YE,GE)60T(F)
IV – IF
Luminous intensity IV (mcd) 500300Ta = 25°C Ta = 25°C Forward current IF (mA) 100503010 5 3 10531 1.6 1.7 2.1 1.8 1.9 2.0 2.2 2.3113510 30 50 100Forward voltage VF (V) Forward current IF (mA)
IV – Tc
10 5 3 1.0
Relative luminous intensity – Wavelength
IF = 20 mA Ta = 25°C Relative luminous intensity IV Relative luminous intensity −20 40 0 20 60 80
0.80.61 0.40.5 0.3 0.20.1 0520
540560580 600 620 640
Case temperature Tc (°C) Wavelength λ (nm)
Radiation pattern
Ta = 25°C
20° 30° 40° 50° 60° 70° 80° 90° 10°
0°
10°
20°
30°
40°
50° 60° 70° 80° 90° 1.0
0 0.2 0.4 0.6 0.8
62008-09-18
www.smdled.com
TL(RE,OE,YE,GE)60T(F) RESTRICTIONS ON PRODUCT USE
• The information contained herein is subject to change without notice.
20070701-EN GENERAL
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
72008-09-18
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