专利名称:Variable capacitance capacitor发明人:Depetro, Riccardo,Manzini, Stefano申请号:EP01830595.3申请日:20010920公开号:EP1296380A1公开日:20030326
专利附图:
摘要:High-Q, variable capacitance capacitor (20, 20'), comprising a pocket (22) ofsemiconductor material; a field insulating layer (23), covering the pocket; an opening (24)in the field insulating layer, delimiting a first active area (24); an access region (25) formedin the active area and extending at a distance from a first edge (24a) of the active area
and adjacent to a second edge (24b) of the active area. A portion (26) of the pocket (22) iscomprised between the access region (15) and the first edge (24a) and forms a firstarmature; an insulating region (30) extends above the portion (26) of said body, and apolysilicon region (31) extends above the insulating region (30) and forms a secondarmature. A portion of the polysilicon region extends above the field insulating layer (23),parallel to the access region (25); a plurality of contacts (32) are formed at a mutualdistance along the portion of the polysilicon region (31) extending above the fieldinsulating layer (23).
申请人:STMicroelectronics S.r.l.
地址:Via C. Olivetti, 2 20041 Agrate Brianza (Milano) IT
国籍:IT
代理机构:Cerbaro, Elena, Dr.
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